通知: ·171109 交流座谈会    ·171109 禹升华副研究员报告    ·171103 韩文标副研究员报告    ·171031 丁忞博士报告    ·171030 Duffar博士报告   



最新进展 您的位置是: 首页 > 科学研究 > 最新进展 > 正文


Polyimide-Damage-Free, CMOS-Compatible Removal of Polymer Residues from Deep Reactive Ion Etching Passivation

发布时间:2015-02-06          来源:涂良成           浏览次数:

Journal of Electronic Materials

March 2015Volume 44Issue 3pp 991-998

W.J. WuT. ZhuJ.Q. LiuJ. FanL.C. Tu

Download PDF


A method for removal of passivation polymer residues from deep reactive ion-etching (DRIE) has been systematically investigated in this study. The method combines dry oxygen plasma ashing and conventional photoresist wet stripping. Samples were carefully examined by x-ray photoelectron spectroscopy (XPS), energy-dispersive x-ray spectroscopy (EDX), and study of surface morphology. XPS and EDX analysis showed that the polymer residues consisted mainly of C-O, CF x (x = 1, 2, 3), and C-CF bonds. Optimized oxygen plasma ashing effectively removes most of the fluorocarbon content, except some nano-residues. Subsequent conventional wet stripping in organic solvents could eliminate these stubborn nanoparticles while dissolving the underlying photoresist. Excellent removal is apparent from scanning electron microscopy images. The fluorine content determined by EDX analysis showed that the residues were completely removed. The metal layers, oxide insulator layers, and the polyimide insulators function well after this critical surface treatment. The excellent results show this is an outstanding method for removal of DRIE passivation polymer residues for MEMS fabrication.


Link: http://link.springer.com/article/10.1007/s11664-014-3604-5

上一篇:Universal nonlinear scattering in ultra-high Q whispering gallery-mode resonators
下一篇:Note: Inter-satellite laser range-rate measurement by using digital phase locked loop

Copyright (C) 华中科技大学引力实验中心 地址:湖北省武汉市洪山区珞喻路1037号 邮编:430074 技术支持:尚网互联