通知: ·180828 肖智博士学术报告    ·180820 苗子博博士学术报告    ·180820 袁海东教授学术报告    ·180727 陈雁北教授学术报告    ·180705 黄乘利研究员学术报告   



最新进展 您的位置是: 首页 > 科学研究 > 最新进展 > 正文


High-κ Al2O3 material in low temperature wafer-level bonding for 3D integration application

发布时间:2014-04-08          来源:涂良成           浏览次数:

High-κ Al2O3 material in low temperature wafer-level bonding for 3D integration application

AIP ADVANCES 4, 031311 (2014)

 J. Fan,1,a L. C. Tu,1 and C. S. Tan2
MOE Key Laboratory of Fundamental Physical Quantities Measurement, School of Physics, Huazhong University of Science and Technology, Wuhan 430074, People’s Republic of China
2 School of Electrical and Electronics Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798
(Received 28 November 2013; accepted 17 February 2014; published online 25 February 2014)

    This work systematically investigated a high-κ Al2O3 material for low temperature wafer-level bonding for potential applications in 3D microsystems. A clean Si wafer with an Al2O3 layer thickness of 50 nm was applied as our experimental approach. Bonding was initiated in a clean room ambient after surface activation, followed by annealing under inert ambient conditions at 300 ◦C for 3 h. The investigation consisted of three parts: a mechanical support study using the four-point bending method, hermeticity measurements using the helium bomb test, and thermal conductivity analysis for potential heterogeneous bonding. Compared with samples bonded using a conventional oxide bonding material (SiO2), a higher interfacial adhesion energy (∼11.93 J/m2) and a lower helium leak rate (∼6.84 × 10−10 atm.cm3/sec) were detected for samples bonded using Al2O3. More importantly, due to the excellent thermal conductivity performance of Al2O3, this technology can be used in heterogeneous direct bonding, which has potential applications for enhancing the performance of Si photonic integrated devices.

上一篇:Decelerating polar molecules using traveling microwave lattices
下一篇:Feedback control of torsion balance in measurement of gravitational constant G with angular acceleration method

Copyright (C) 华中科技大学引力中心 地址:湖北省武汉市洪山区珞喻路1037号 邮编:430074